The general objective of this project, accepted for funding within ECSEL Joint Undertaking, is the realisation of the first 200 mm World Siliciu Carbide Carbide (SiC) Pilot Line Facility dedicated to Power Technology. This will enable European industry to become a global benchmark capable of delivering innovative and competitive solutions to critical societal challenges such as energy saving and CO2 reduction (COP21 agreement), as well as environmental sustainability through electric mobility, power conversion efficiency and Intelligent Production. This project is committed to addressing the following objectives: Develop and demonstrate the operation of the world’s first advanced 200 mm SiC production plant by addressing multiple/cross-reverse capabilities. This cross-cutting capability project exploits the presence of all actors along its value chain and creates the appropriate critical mass to promote vital innovation that will contribute to the overall objectives of ECSEL. The 8" SiC Pilot Line Strategy will allow: • development of 8“SiC substrate • development of 8” SiC equipment • development of diodes, planar MOSFETs and Power Rigs (Trench Power) from 6“devices and Processes to the 8” • development of advanced and special equipment for 8 SiC processing, taking advantage of the already existing equipment from the Silicium production line at the 200 mm wafer size. • the application of such SiC technologies will be a development factor for global energy efficiency and CO2 reduction, in line with the Global Action Plan COP21. • The results of the 8" Pilot Line will be extremely important in the future to determine the strategic decisions regarding the establishment of a large-scale production line for SiC power devices (e.g. intelligent high-complexity power devices and power devices). • The demonstrators will finally test the results in the field of Intelligent Energy and Mobility The pilot line will be based on three main pillars: I) Continuous technological innovation of SiC power devices that meet the growing demand of market applications; II) Industrial policy focused on reducing and optimising the cost of high quality and mass production of SiC; III) Preparing for future upgrades of 8" wafers on disruptive technologies "More than Moore" (e.g. advanced SiC manufacturing, now 150 mm). Target characteristics of the first 8 SiC Pilot Line: The 200 mm SiC Pilot Line will be located in the ST wafer factory in Catania (Italy) and will share the facilities with the one currently in use. There will be very difficult activities in terms of assembling and adapting problems due to the fact that the new c