Electronic components used for on-board space applications are subjected to cosmic radiation that may render them inoperative. The FemtoGaN project is developing a new technique to test femtosecond laser excitation radiation of electronic components based on GaN and SiC materials for on-board space applications. Unlike silicon-based devices where these studies have been conducted for more than 30 years, the test benches and associated protocols for GaN and SiC components are still very rare despite the fast-growing market for power and microwave components using this new material chain. The FemtoGaN project combines the complementary expertise of the LPCNO laboratory and the SME TRAD. Laser test results will be compared to heavy ion irradiation campaigns carried out on the same components and coupled with 3D simulation. The technical solutions and know-how acquired at the end of these 3 years of study will allow TRAD to install in its premises in Labège (31) a new test bench dedicated to this new component sector and sell the services associated with its French and international customers. These laser tests will allow TRAD customers to (i) select the least radiation sensitive commercial components and (ii) develop new, more robust components with optimised geometries and structures.