The operation is part of the project IPCEI (Important Project of Common European Interest) Nano2022 brought to the French level by ST MICROELECTRONICS. It concerns WP1 of this project, which aims to develop GaN/Si technologies on 200 mm wafers. More specifically, the operation concerns the development of atomic layer engraving processes of GaN and AIGaN for the design of HEMT diodes and transistors. The project is part of the “Plasma engravure” activity of the GREMI laboratory within the axis “functional metals by Plasmas and Lasers”.